Features of photothermal transformation in porous silicon based multilayered structures
نویسندگان
چکیده
منابع مشابه
Photosensitive porous silicon based structures
We present results of electrical and photoelectrical measurements on two types of Al/porous silicon (PS)/monocrystalline silicon (c-Si)/Al sandwich structures with thin and thick PS layers obtained by stain etching. Current-voltage characteristics and photosensitivity spectra indicate that for structures with a thin PS layer the photosensitivity is determined by PS/c-Si heterojunctions (HJ), wh...
متن کاملOptical properties of multilayered porous silicon
We present a short review of some optical devices based on multilayered porous silicon, which can be easily obtained by varying the formation current during the etching process. These include Bragg reflectors and Fabry–Pérot microcavities, which can be adjusted from the visible to the near infrared. The interface roughness, tragic in the case of multilayers, is studied. It can be drastically re...
متن کاملScattering Matrix Method Applied to the Characterisation of Multilayered Porous Silicon Structures
We describe a numerical model initially aimed at simulating the propagation of acoustic surface waves in multilayered structures and show how it can be used to the prediction of the electric response of a non-focusing ultrasonic transducer. We also apply this model to non-destructive evaluation of the elastic properties of porous silicon.
متن کاملPorous silicon structures for low-cost diffraction-based biosensing
Judson D. Ryckman, Marco Liscidini, J. E. Sipe, and S. M. Weiss Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, USA Dipartimento di Fisica “A. Volta,” Università degli Studi di Pavia, via Bassi 6, 27100 Pavia, Italy Department of Physics and Institute for Optical Sciences, University of Toronto, 60 St. George St. Toronto M5S 1A7 Onta...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2019
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.5099010